▎ 摘　　要

The oxidation kinetics of Cu through graphene were evaluated from the surface coverage of Cu oxide (F-ox) by varying the oxidation time (t(ox)= 10-360 min) and temperature (T-ox= 180-240 degrees C) under an air environment.F-ox, as a function of time, well followed the Johnson-Mehl-Avrami-Kolmogorov equation; thus, the activation energy of Cu oxidation was estimated as 1.5 eV. Transmission electron microscopy studies revealed that Cu2O formed on the top of the graphene at grain boundaries (G-GBs), indicating that Cu2O growth was governed by the out-diffusion of Cu through G-GBs. Further, the effect of Cu oxidation on graphene quality was investigated by measuring the electrical properties of graphene after transferring. The variation of the sheet resistance (R-s) as a function oft(ox)at allT(ox)was converted into one curve as a function ofF(ox).R(s)of 250 omega sq(-1)was constant, similar to that of as-grown graphene up toF(ox)= 15%, and then increased withF(ox). The Hall measurement revealed that the carrier concentration remained constant in the entire range ofF(ox), andR(s)was solely related to the decrease in the Hall mobility. The variation in Hall mobility was examined according to the graphene percolation probability model, simulating electrical conduction on G-GBs during Cu2O evolution. This model well explains the constant Hall mobility withinF(ox)= 15% and drasticF(ox)degradation of 15-50% by the concept that the electrical conduction of graphene is disconnected by Cu2O formation along with the G-GBs. Therefore, we systematically developed the oxidation kinetics of Cu through graphene and simultaneously examined the changes in the electrical properties of graphene.