• 文献标题:   Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime
  • 文献类型:   Article
  • 作  者:   CURTIN AE, FUHRER MS, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Maryland
  • 被引频次:   28
  • DOI:   10.1063/1.3595360
  • 出版年:   2011

▎ 摘  要

Ambient-environment Kelvin probe microscopy of many (10 mu m)(2) areas of single-layer graphene on SiC(0001) shows area-to-area rms surface potential variation of 12 meV. Electronic transport data are consistent with the minimum conductivity regime. Together the data indicate a highly uniform carrier concentration with a small magnitude (<10(12) cm(-2)). We conclude that the previously reported large spread in carrier densities from Hall measurements on similar samples is an artifact of electron-hole puddling in the minimum conductivity regime. (C) 2011 American Institute of Physics. [doi:10.1063/1.3595360]