• 文献标题:   In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
  • 文献类型:   Article
  • 作  者:   CHEN Q, HUANG H, CHEN W, WEE ATS, FENG YP, CHAI JW, ZHANG Z, PAN JS, WANG SJ
  • 作者关键词:   core level, hafnium compound, heat treatment, highk dielectric thin film, plasma materials processing, semiconductor heterojunction, semiconductorinsulator boundarie, spectral line shift, sputter deposition, surface chemistry, thermal stability, xray photoelectron spectra
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   10
  • DOI:   10.1063/1.3327834
  • 出版年:   2010

▎ 摘  要

High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2/graphene/4H-SiC heterojunctions have good thermal stability up to 650 degrees C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.