• 文献标题:   Ultralow Secondary Electron Emission of Graphene
  • 文献类型:   Article
  • 作  者:   LUO J, TIAN P, PAN CT, ROBERTSON AW, WARNER JH, HILL EW, BRIGGS GAD
  • 作者关键词:   graphene, monolayer, secondary electron emission, secondary electron yield, scanning electron microscopy
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851
  • 通讯作者地址:   Univ Oxford
  • 被引频次:   45
  • DOI:   10.1021/nn102579f
  • 出版年:   2011

▎ 摘  要

In order to ensure that vacuum electronic devices work with high overall efficiency, it is required to use materials with low secondary electron emission to fabricate or coat collectors, grids, and envelope walls of the devices. We report that the secondary electron yields of monolayer graphenes are ultralow, comparable with the lowest yields of the materials currently used In this practical application. This offers a pathway for the application of light graphene with only one-atom thickness and good electronic and thermal conductivities in vacuum electronic devices.