• 文献标题:   Doped graphene: the interplay between localization and frustration due to the underlying triangular symmetry
  • 文献类型:   Article
  • 作  者:   BARRIOSVARGAS JE, NAUMIS GG
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Univ Nacl Autonoma Mexico
  • 被引频次:   11
  • DOI:   10.1088/0953-8984/23/37/375501
  • 出版年:   2011

▎ 摘  要

An intuitive explanation of the increase in localization observed near the Dirac point in doped graphene is presented. To do this, we renormalize the tight binding Hamiltonians in such a way that the honeycomb lattice maps into a triangular one. Then, we investigate the frustration effects that emerge in this Hamiltonian. In this doped triangular lattice, the eigenstates have a bonding and antibonding contribution near the Dirac point, and thus there is a kind of Lifshitz tail. The increase in frustration is related to an increase in localization, since the number of frustrated bonds decreases with disorder, while the frustration contribution raises.