▎ 摘　　要

Landau levels (LLs) of ABA-stacked trilayer graphene (TLG) are described as the combination of monolayer graphene-like LLs and bilayer graphene-like LLs. They are extremely sensitive to the applied perpendicular electric displacement field D. Here, we demonstrate the electrical control of cyclotron resonance (CR) in a dual-gated ABA-stacked TLG. Under the irradiation of mid-infrared light, we observed the photovoltage induced by the CR absorption through the photothermoelectric effect. The resonant magnetic field in CR is changed by applying D while keeping the carrier density constant. Numerical simulations based on the tight-binding model complement the experimental observations. We believe that the present study provides a boost to graphene-based photodetectors and photoemitters with an electrically tunable wavelength in mid-infrared to terahertz spectral ranges.