▎ 摘　　要

We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: (i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient; (ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; (iii) by fitting the magnetoresistances at low temperature. All methods converge to give a disorder amplitude of (20 +/- 10) meV. Because of this relatively low disorder, close to the CNP, at low temperature, the sample resistivity does not exhibit the standard value similar or equal to h/4e(2) but diverges. Moreover, themagnetoresistance curves have a unique ambipolar behavior, which has been systematically observed for all studied samples. This is a signature of both asymmetry in the density of states and in-plane charge transfer. Themicroscopic origin of this behavior cannot be unambiguously determined. However, we propose a model in which the SiC substrate steps qualitatively explain the ambipolar behavior.