• 文献标题:   High-responsivity graphene photodetectors integrated on silicon microring resonators
  • 文献类型:   Article
  • 作  者:   SCHULER S, MUENCH JE, RUOCCO A, BALCI O, THOURHOUT DV, SORIANELLO V, ROMAGNOLI M, WATANABE K, TANIGUCHI T, GOYKHMAN I, FERRARI AC, MUELLER T
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   34
  • DOI:   10.1038/s41467-021-23436-x
  • 出版年:   2021

▎ 摘  要

Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve>90% light absorption in a similar to 6 mu m SLG channel along a Si waveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach similar to 400 K for an input power similar to 0.6 mW, resulting in a voltage responsivity similar to 90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10(-9) bit-error rate, on par with mature semiconductor technology, but with a natural generation of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print. Optical receivers based on graphene still suffer from low responsivity. Here, the authors integrate a photo-thermoelectric graphene photodetector with a Si micro-ring resonator, and obtain a voltage responsivity similar to 90 V/W and a reduction of energy-per-bit consumption, enabling performance on par with mature semiconductor technology.