• 文献标题:   Electron effective attenuation length in epitaxial graphene on SiC
  • 文献类型:   Article
  • 作  者:   AMJADIPOUR M, MACLEOD J, LIPTONDUFFIN J, TADICH A, BOECKL JJ, IACOPI F, MOTTA N
  • 作者关键词:   epitaxial graphene, inelastic mean free path imfp, photoelectron spectroscopy, effective attenuation length eal
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Queensland Univ Technol
  • 被引频次:   3
  • DOI:   10.1088/1361-6528/aae7ec
  • 出版年:   2019

▎ 摘  要

The inelastic mean free path (IMFP) for carbon-based materials is notoriously challenging to model, and moving from bulk materials to 2D materials may exacerbate this problem, making the accurate measurements of IMFP in 2D carbon materials critical. The overlayer-film method is a common experimental method to estimate IMFP by measuring electron effective attenuation length (EAL). This estimation relies on an assumption that elastic scattering effects are negligible. We report here an experimental measurement of electron EAL in epitaxial graphene on SiC using photoelectron spectroscopy over an electron kinetic energy range of 50-1150 eV. We find a significant effect of the interface between the 2D carbon material and the substrate, indicating that the attenuation length in the so-called 'buffer layer' is smaller than for free-standing graphene. Our results also suggest that the existing models for estimating IMFPs may not adequately capture the physics of electron interactions in 2D materials.