▎ 摘　　要

In this paper, the effect of ferromagnetic metal stripe and the strained barrier on the valley-dependent transport characteristics of electrons is studied in a graphene nanostructure. The numerical results show that a large valley polarization can be obtained in such a graphene, and the valley-dependent transport characteristics can be well controlled by changing the strength of the magnetic field induced by the ferromagnetic metal stripe, the width of the ferromagnetic metal stripe and the position of the strained barrier. Therefore, the valley polarization can be modulated by controlling the ferromagnetic metal stripe and the strained barrier. This work can promote the research and development of the new valleytronic devices, and then meet the practical application needs.