• 文献标题:   Electron-Diffraction Study of the Structure of Epitaxial Graphene Grown by the Method of Thermal Destruction of 6H- and 4H-SiC (0001) in Vacuum
  • 文献类型:   Article
  • 作  者:   KOTOUSOVA IS, LEBEDEV SP, LEBEDEV AA, BULAT PV
  • 作者关键词:  
  • 出版物名称:   PHYSICS OF THE SOLID STATE
  • ISSN:   1063-7834 EI 1090-6460
  • 通讯作者地址:   Ioffe Inst
  • 被引频次:   1
  • DOI:   10.1134/S1063783418070156
  • 出版年:   2018

▎ 摘  要

The method of reflection high-energy electron diffraction (RHEED) is used for studying the structure of graphene layers formed on the surface of the Si-face of conductive and semi-insulating 6H- and 4H-SiC(0001) substrates by thermal desorption of Si atoms in high vacuum, depending on the temperature and time of sublimating Si atoms as well as depending on the method of preprocessing the substrate surface. Diffraction patterns are recorded in the and crystallographic directions of the substrates. It is found that in all experiments the formation of graphene layers occurs with a rotation of the graphene crystal lattice by 30A degrees relative to the SiC lattice.