• 文献标题:   Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
  • 文献类型:   Article
  • 作  者:   MIYAZAKI H, LI SL, NAKAHARAI S, TSUKAGOSHI K
  • 作者关键词:   electrical conductivity, energy gap, field effect transistor, fullerene device, graphene, pn junction
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   NIMS
  • 被引频次:   12
  • DOI:   10.1063/1.3701592
  • 出版年:   2012

▎ 摘  要

Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band gap is generated by applying a perpendicular electric field to the bilayer graphene, and the ON state is induced by the p-p or n-n configurations of the junctions. As the number of the junction increases, current suppression in the OFF state is pronounced. The multiple p-n junctions also realize the saturation of the drain current under relatively high source-drain voltages. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701592]