• 文献标题:   Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T-MoS2 on Graphene for Enhanced Photoresponse
  • 文献类型:   Article
  • 作  者:   CUI WL, XU SS, YAN B, GUO ZH, XU Q, SUMPTER BG, HUANG JS, YIN SW, ZHAO HJ, WANG Y
  • 作者关键词:   2d heterostructure, hydrogen evolution reaction, lateral heterojunction, photoresponse, triphasic vertical stacking
  • 出版物名称:   ADVANCED ELECTRONIC MATERIALS
  • ISSN:   2199-160X
  • 通讯作者地址:   Zhengzhou Univ
  • 被引频次:   6
  • DOI:   10.1002/aelm.201700024
  • 出版年:   2017

▎ 摘  要

Recently the applications of 2D materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Here, the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T-molybdenum disulfide (MoS2) heterostructures on graphene with the assistance of supercritical carbon dioxide is reported. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficiently hop to the 1T-MoS2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T-MoS2 phase are exploited to fill the photoholes on the photoexcited 2H-MoS2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photoinduced charge carriers on the 2H-MoS2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.