▎ 摘　　要

Inexpensive production and characteristic magnetoconductance fluctuation of Ge-supported stable graphene/graphene oxide layers are being reported. The changeover from graphite to graphene oxide structure during synthesis was evident from X-ray diffraction patterns whereas development of mono and bilayer graphene/graphene oxide was confirmed by electron microscopy studies. Responding to applied magnetic fields (up to 0.3 T), the Ge-supported graphene layers are shown to exhibit prominent magnetoconductance steps and are attributed to the alteration of Landau levels across the Fermi surface. While low-cost fabrication process is attractive for large scale production, the advantage of short synthesis time and understanding magneto-transport mechanism would find relevance in graphene-based nanodevices and circuits.