• 文献标题:   Chemical Vapor Deposition and Application of Graphene-Like Tungsten Disulfide
  • 文献类型:   Review
  • 作  者:   YOU YC, ZENG T, LIU JS, HU TS, TAI GA
  • 作者关键词:   ws2 thin film, chemical vapor deposition, transistor, heterostructure, photoelectric device
  • 出版物名称:   PROGRESS IN CHEMISTRY
  • ISSN:   1005-281X
  • 通讯作者地址:   Nanjing Univ Aeronaut Astronaut
  • 被引频次:   3
  • DOI:   10.7536/PC150433
  • 出版年:   2015

▎ 摘  要

Graphene-like transition metal chalcogenide compounds such as MoS2, WS2, MoSe2, WSe2 have attracted wide interests because of their unique layer number-dependent bandgap. In particularly, intrinsic WS2 is a bipolar semiconductor with n-type and p-type electronic transport properties, it is expected to be widely used in electrical circuit, memory, photodetector and photovoltaic devices. Recently, chemical vapor deposition (CVD) technique, in contrast to traditional chemical or physical exfoliation options, is extensively used to prepare large-area two-dimensional transition metal chalcogenide (such as MoS2, MoSe2, WS2 and WSe2) atomic layers. Although a few review papers about other two-dimensional materials have been published, the detailed introduction for graphene-like WS2 has been rarely reported. In this review, we summarize the research progress on chemical vapor deposition and related devices of graphene-like WS2. First, we introduce two growth methods of preparing WS2 thin films via chemical vapor deposition techniques; two-step growth route and one-step growth route, and then discuss the growth mechanism of the two methods and essential parameters that influence the growth of the WS2 thin films such as sulfur content, carrier gas composition, reaction temperature and substrate materials. Then, we introduce the research progress of WS2-based transistors, photoelectric devices and related heterostructures. Finally, we analyze and review possible problems in developing WS2-related devices.