▎ 摘　　要

Uniform single-crystal graphene domains were synthesized on copper foils by atmospheric pressure chemical vapor deposition with activated carbon dioxide (CO2). Controlled growth of graphene domains with a shape evolution from hexagonal to round has been achieved by varying the flow rate of CO2. The excess CO2 passivation induced graphene domain morphology transformation was systematically studied. Field-effect transistors were fabricated based on our CO2-derived graphene and their electrical properties were measured both in air and N-2. The maximum fitted device mobilities for holes and electrons could achieve up to 3010 and 750 cm(2) V-1 s(-1), respectively. Our method provides a viable way for the industrial application of graphene derived from CO2 which could be converted to carbon materials.