▎ 摘　　要

Application of magnetic metal/graphene hybrid structures in magnetosensorics requires the formation of high-quality low-ohmic (barrier-free) contacts and understanding of mechanisms of electric charge transfer near and through the metal/graphene contact area. In present paper we fabricate samples of twisted graphene electrochemically decorated with Co particles (Co-G/SiO2) which demonstrate perfect ohmic electric contact between Co and graphene sheets. Temperature and magnetic field dependencies of surface resistance for pure twisted graphene (G/SiO2) and Co-G/SiO2 samples are considered within the models of 3D Mott variable range hopping and 2D weak-localization quantum corrections to the Drude conductivity. Phenomenological model is proposed explaining the experimentally observed transition from predominantly negative magnetoresistive effect in weak magnetic fields B (below 1-2 T) to positive magnetoresistance (PMR) at B beyond 5 T assuming the growth of PMR due to the distortion of current-conducting routes under the influence of Lorentz force which originates from the enhancement of large-scale potential relief in Co-G/SiO2 sample. This work considers the new approach to the application of G/SiO2 decoration with Co particles for creation both metallic (distributed, defragmented) shunts and high-quality ohmic electrodes in magnetic sensing.