• 文献标题:   The influence of impurity formation on electron inelastic scattering of suspended graphene
  • 文献类型:   Article
  • 作  者:   CHEN CJ
  • 作者关键词:   annealing, suspended graphene, tem, electronic scattering
  • 出版物名称:   JOURNAL OF RAMAN SPECTROSCOPY
  • ISSN:   0377-0486 EI 1097-4555
  • 通讯作者地址:   Natl Taiwan Ocean Univ
  • 被引频次:   1
  • DOI:   10.1002/jrs.4212
  • 出版年:   2013

▎ 摘  要

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two-phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D and D+D bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two-phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright (c) 2012 John Wiley & Sons, Ltd.