• 文献标题:   Engineering the strain in graphene layers with Au decoration
  • 文献类型:   Article
  • 作  者:   PANNU C, SINGH UB, KUMAR S, TRIPATHI A, KABIRAJ D, AVASTHI DK
  • 作者关键词:   graphene, au nanodot, defect, raman spectroscopy, xray diffraction, strain
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Inter Univ Accelerator Ctr
  • 被引频次:   16
  • DOI:   10.1016/j.apsusc.2014.04.133
  • 出版年:   2014

▎ 摘  要

Graphene sheets decorated with Au nanodots are synthesized by deposition of Au of three different thicknesses and subsequent annealing at 400 degrees C. Different thicknesses of Au film for the formation of Au nanodots on graphene are measured using Rutherford backscattering spectrometry and morphology is studied using scanning electron microscopy. Raman spectroscopy indicates 3-6-fold increase in I-D/I-G ratio depending on the content of Au deposited on graphene. The increase in disorder in Au decorated graphene layers is explained on the basis of interaction of Au atoms with Pi bonds of graphene. The splitting and blueshift in G band signifies compressive strain in Au deposited graphene. X-ray diffraction studies using synchrotron radiation source confirm compressive strain in graphene, which increases with increase of Au film thickness. (C) 2014 Elsevier B.V. All rights reserved.