▎ 摘　　要

We performed first-principles calculations to reveal a viable way for tailoring the electronic properties of Z-shaped double gate graphene field effect transistor (Z-GFET). We used B/N impurities in channel region of Z-GFET. It is revealed that doping of channel region by B/N has a significant effect on its band gap which is directly reflected in the corresponding current-voltage characteristics. A semiconducting to metallic transition is also observed in selected configurations. For B-N co-doping (config. W), direct band gap of 1.84 eV is obtained which is 20% lower than that of pristine channel. Present results are useful for future electronic devices. (C) 2014 Elsevier B.V. All rights reserved.