▎ 摘　　要

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of similar to 0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on off current ratios using graphene on cubic-SiC.