• 文献标题:   Weak localization in graphene
  • 文献类型:   Article
  • 作  者:   FAL KO VI, KECHEDZHI K, MCCANN E, ALTSHULER BL, SUZUURA H, ANDO T
  • 作者关键词:   disordered system, electronic transport, quantum localization
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Univ Lancaster
  • 被引频次:   45
  • DOI:   10.1016/j.ssc.2007.03.049
  • 出版年:   2007

▎ 摘  要

We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong intervalley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures. (c) 2007 Elsevier Ltd. All rights reserved.