• 文献标题:   Breakdown of the N=0 quantum Hall state in graphene: Two insulating regimes
  • 文献类型:   Article
  • 作  者:   ZHANG L, CAMACHO J, CAO H, CHEN YP, KHODAS M, KHARZEEV DE, TSVELIK AM, VALLA T, ZALIZNYAK IA
  • 作者关键词:   electrical resistivity, graphene, landau level, quantum hall effect, wigner crystal
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Brookhaven Natl Lab
  • 被引频次:   17
  • DOI:   10.1103/PhysRevB.80.241412
  • 出版年:   2009

▎ 摘  要

We studied the unusual quantum Hall effect (QHE) near the charge neutrality point in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in resistivities rho(xx),vertical bar rho(xy)vertical bar with decreasing Landau-level filling for nu < 2, where we identify two insulating regimes. First, rho(xx,xy) increases nearly exponentially within the range of several resistance quanta R-K, while the Hall effect gradually disappears and the off-diagonal resistivity rho(xy) eventually becomes independent of the direction of magnetic field, consistent with the Hall insulator with local transport. Then, at a filling nu approximate to 1/2, there is a cusp in rho(xx)(nu) and an onset of even faster growth with the decreasing nu, indicating transition to a collective insulator state. A likely candidate for this state is a pinned Wigner crystal.