• 文献标题:   Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   TOKARCZYK M, KOWALSKI G, WITOWSKI AM, KOZILSKI R, LIBRANT K, AKSIENIONEK M, LIPINSKA L, CIEPIELEWSKI P
  • 作者关键词:  
  • 出版物名称:   ACTA PHYSICA POLONICA A
  • ISSN:   0587-4246 EI 1898-794X
  • 通讯作者地址:   Univ Warsaw
  • 被引频次:   4
  • DOI:   10.12693/APhysPolA.126.1190
  • 出版年:   2014

▎ 摘  要

"Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900 degrees C play crucial role in structural and other properties. For the process temperature around 2000 degrees C we found the onset of the graphitization in the samples.