• 文献标题:   Growth Control of ZnO Nanorods on Single-Layer Graphene
  • 文献类型:   Article
  • 作  者:   KIM BY, JANG M, LEE NE
  • 作者关键词:   zno nanorod, graphene, gold transfer, fieldeffect transistor
  • 出版物名称:   SCIENCE OF ADVANCED MATERIALS
  • ISSN:   1947-2935 EI 1947-2943
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   2
  • DOI:   10.1166/sam.2015.2355
  • 出版年:   2015

▎ 摘  要

Growth of ZnO nanorods (NRs) on single-layer graphene (SLG) is of great interest for various applications including energy harvesting devices, sensors, and transistors. SLG synthesized by means of chemical vapor deposition was transferred onto the desired substrate by using a thin Au layer as a supporting layer to keep the SLG surface clean, and ZnO NRs were vertically grown on the SLG by a solution growth method. To grow the ZnO NRs on SLG, ZnO nanoparticles (NPs) were used as seeds and different seeding conditions were tested to control the diameter, height and density of the grown ZnO NRs. Analyses of the morphology and structure of grown ZnO NRs indicated that there was good control over the field-effect transistors (FETs) based on the heterostructure of ZnO NRS vertically grown on SLG as a channel showed excellent ambipolar transfer characteristics similar to those of a graphene-channel FET. These solution-gated FETs may be applicable to the sensing of ions and biomolecules.