▎ 摘 要
Growth of ZnO nanorods (NRs) on single-layer graphene (SLG) is of great interest for various applications including energy harvesting devices, sensors, and transistors. SLG synthesized by means of chemical vapor deposition was transferred onto the desired substrate by using a thin Au layer as a supporting layer to keep the SLG surface clean, and ZnO NRs were vertically grown on the SLG by a solution growth method. To grow the ZnO NRs on SLG, ZnO nanoparticles (NPs) were used as seeds and different seeding conditions were tested to control the diameter, height and density of the grown ZnO NRs. Analyses of the morphology and structure of grown ZnO NRs indicated that there was good control over the field-effect transistors (FETs) based on the heterostructure of ZnO NRS vertically grown on SLG as a channel showed excellent ambipolar transfer characteristics similar to those of a graphene-channel FET. These solution-gated FETs may be applicable to the sensing of ions and biomolecules.