▎ 摘　　要

A hybrid structure of n -ZGRN/(m,m)SWCNT, namely n -ZGNR-(m,m)SWCNT, is predicted. It is found that the n -ZGNR-(m,m)SWCNT is a ferromagnetic semiconductor with intrinsic spin in which the manipulation of spin-polarized currents can be achieved just simply by applying a gate voltage. Moreover, compared to n -ZGNR, the n- ZGNR-(m,m)SWCNT possesses enhanced local magnetic moment. Semiconductors with intrinsic spin represent a new direction in the exploration of materials for spintronics and good prospects for practical spintronic applications. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)