▎ 摘　　要

We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract properties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually contrasting previous results of scanning tunneling microscopy in graphene.