▎ 摘　　要

Direct growth of gallium nitride (GaN) thin films is performed using plasma-enhanced atomic layer deposition (PEALD) at 300 ? on a sapphire with a graphene interlayer. The x-ray diffraction and spherical aberration corrected transmission microscope results confirm that the GaN thin films are nearly single-crystalline. Additionally, the interfacial properties and nucleation behaviors of the GaN thin films deposited on graphene are investigated in detail. Therefore, this study offers a perspective on PEALD growth of high-quality nanoscale GaN epilayers and broadens the choice for low-temperature fabrication of GaN based-devices.