▎ 摘　　要

Graphene nanoribbon (GNR) based nanotransistors (Nano-FET) are preferred part of concerns in present scenario in field of nanoelectronics devices. Various reports stated by theoretician has motivated experimentalist to design high performance GNR based Nano-FET. A traditional approach of similar electrode and channel region material has been considered habitually in past. Here, in present work we report a unique approach for designing Nano-FET via considering zigzag-GNR and armchair-GNR as electrode and channel region respectively. The effect of defect in channel region i.e. stone wale (SW) and mono-vacancy (MV) has also been demonstrated and compared with its pristine form of Nano-FET. The electronic and quantum transport properties along with Nano-FET performance has be evaluated and analysed. Our findings shows that, MV based Nano-FET provides high transconductance and charge mobility in comparison to pristine and SW based Nano-FET. These outcomes will inspire experimentalist to design GNR based Nano-FET in proposed design and assists them in enhancing the performance.