▎ 摘　　要

This paper presents a study on the photovoltaic effect of a graphene/MoS2/Si double heterostructure, grown by rapid chemical vapor deposition. It was found that the double junctions of the graphene/MoS2 Schottky junction and the MoS2/Si heterostructure played important roles in enhancing the device's performance. They allowed more electron-hole pairs to be efficiently generated, separated, and collected in the graphene/MoS2/Si double interface. The device demonstrated an open circuit voltage of 0.51 V and an energy conversion efficiency of 2.58% under an optical illumination of 500 mW/cm(2). The photovoltaic effect of the device was partly attributed to the strong light absorption and photoresponse of the few-layer MoS2 film, and partly ascribed to the high carrier-collection-rate of the double van der Waals heterostructures (vdWHs) in the device.