• 文献标题:   Characterization of chemical vapor deposition-grown graphene films with various etchants
  • 文献类型:   Article
  • 作  者:   CHOI H, KIM JY, JEONG HY, CHOI CG, CHOI SY
  • 作者关键词:   graphene, chemical vapor deposition, etchant, raman spectroscopy, transmittence, xray photoelectron spectroscopy, hall measurement
  • 出版物名称:   CARBON LETTERS
  • ISSN:   1976-4251 EI 2233-4998
  • 通讯作者地址:   Korea Adv Inst Sci Technol
  • 被引频次:   8
  • DOI:   10.5714/CL.2012.13.1.044
  • 出版年:   2012

▎ 摘  要

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of FeCl3 etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations (HNO3, HCl, FeCl3 + HCl, and FeCl3 + HNO3). The combination of FeCl3 and acidic solutions (HCl and HNO3) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.