▎ 摘　　要

A device model for multi-layer graphene nanoribbons terahertz detector is presented. To investigate the device characteristics, we analyze the source-drain current as a function of incident energy and derive the analytical formulas for detector responsivity. In addition, the dependences of detector responsivity on the back gate voltage as well as on the substrate thickness, temperature and energy gap are discussed. It is shown that the detector characteristics can be effectively modulated by these parameters. Compared with single layer graphene nanoribbons, multiple nanoribbons layers can greatly enhance the source-drain current, achieving higher detector responsivity and sensitivity.