▎ 摘　　要

Raman spectroscopy was used to investigate the interaction between graphene and hexagonal palladium nanosheets (Pd NSs). Pd NSs were synthesized by using a conventional CO-confined growth technique, and exhibited a strong surface plasmon resonance (SPR) absorption peak at around 980 nm. Using 514 and 785 nm excitation lasers, a considerable blue-shift of Raman peaks in graphene was found. The blue-shift of the G peak obtained using a 785 nm laser was significantly larger than that obtained using a 514 nm laser, demonstrating that Pd NS absorption induces hole-doping in graphene. Based on both first-principles calculations and variations in work functions, the qualitative analysis reveals that their interaction is driven by electron transport from graphene to Pd NSs. Furthermore, using a 785 nm excitation laser (near to the SPR absorption peak of Pd NSs), hot holes were readily injected into graphene, resulting in increased hole-doping levels.