▎ 摘　　要

Based on the transfer-matrix method, the spin-polarized transport properties of electrons through ballistic graphene-based quantum tunneling junctions with spatially modulated strength of spin-orbit interactions (SOIs) have been investigated. It is shown that magnetoresistance (MR) oscillates with the SOI strength, number of the layers, and incident energy. Application of such a phenomenon to design spin-polarized electron devices based on the graphene material is anticipated. (C) 2010 Elsevier B.V. All rights reserved.