• 文献标题:   Perturbation Electrochemiluminescence Imaging to Observe the Fluctuation of Charge-Transfer Resistance in Individual Graphene Microsheets with Redox-Induced Defects
  • 文献类型:   Article
  • 作  者:   ZHU H, JIN R, JIANG DC, ZHU JJ
  • 作者关键词:   electrochemiluminescence imaging, fluctuation, chargetransfer resistance, individual graphene microsheet, redoxinduced defect
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Nanjing Univ
  • 被引频次:   2
  • DOI:   10.1021/acsami.9b14017
  • 出版年:   2019

▎ 摘  要

Here, the fluctuation of charge-transfer resistance in individual reduced graphene oxide (rGO) microsheets with more redox-induced defects is unprecedentedly visualized using a perturbation electrochemiluminescence (ECL) imaging. This perturbation uses a short and low potential to recover defect-covered rGO microsheets slightly and then introduces a high potential to form more redox-induced defects resulting in an increase of charge-transfer resistance. Also, these defects at rGO microsheets enhance their catalytic feature and the resultant ECL intensity so that the temporal resolution in ECL imaging is improved to 30 ms. Aided by this fast imaging approach, the exponential decrease of ECL intensity at individual graphene microsheets after the oxidation is observed, which reflects the increase of their charge-transfer resistances. Since the charge-transfer resistance at electrode surfaces is mainly affected by the conductivity of electrode materials, the result provides the dynamic information to support the reduction of the electrical conductivity in graphene with more defects.