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  • 文献标题:   A Dual-Polarity Graphene NEMS Switch ESD Protection Structure
  • 文献类型:   Article
  • 作　　者:   MA R, CHEN Q, ZHANG W, LU F, WANG CK, WANG A, XIE YH, TANG H
  • 作者关键词:   graphene, gnems, switch, esd, tlp
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   10
  • DOI:   10.1109/LED.2016.2544343
  • 出版年:   2016

▎ 摘　　要

Conventional on-chip electrostatic discharge (ESD) protection structures for integrated circuits (ICs) rely on in-Si p-n-junction-based devices, which have many inherent disadvantages unsuitable for ICs at nanonodes. This letter reports a novel above-IC graphene-based nanoelectromechanical system (gNEMS) transient switch ESD protection mechanism and structure. Transmission line pulse testing shows dual-polarity transient ESD switching effect with a response time down to 200 ps. This gNEMS switch is a potential ESD protection solution to realize the above-Si ESD protection designs through 3-D integration in IC back end of line.