▎ 摘　　要

In this work, an easy method to etch monolayer graphene is shown by catalytic oxidation in the presence of ZnO nanoparticles (NPs). The catalytic etching of monolayer graphene, which was transferred to the channel of field-effect transistors (FETs), was performed at low temperature by heating the FETs several times under an inert gas atmosphere (ZnO + C -> Zn + CO or CO2). As the etching process proceeded, diverse etched structures in the shape of nano-channels and pits were observed under microscopic observation. To confirm the evolution of etching, current voltage characteristics of monolayer graphene were measured after every step of etching by catalytic oxidation. As a result, the conductance of mono layer graphene decreased with the development of etched structures. This decrease in conductance was analyzed by percolation theory in a honeycomb structure. Finally, well-patterned graphene was obtained by oxidizing graphene under air in the presence of NPs, where Al was deposited on graphene as a mask for designed patterns. This method can substitute graphene etching via carbon hydrogenation using H-2 at high temperature.