• 文献标题:   A high-tortuosity holey graphene in-situ derived from cytomembrane/cytoderm boosts ultrastable potassium storage
  • 文献类型:   Article
  • 作  者:   XIAO J, MIN X, LIN Y, YU QY, WANG W, WU XW, LIU YG, HUANG ZH, FANG MH
  • 作者关键词:   potassiumion batterie, graphene, high tortuosity, cytomembrane cytoderm, anode
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCE TECHNOLOGY
  • ISSN:   1005-0302 EI 1941-1162
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.jmst.2022.08.024 EA OCT 2022
  • 出版年:   2023

▎ 摘  要

The sluggish K + kinetics and structural instability of the generally-used graphite and other carbon-based materials hinder the development of potassium-ion batteries (PIBs) for high-rate capability and long-term cycling. Herein, inspired by the unique flake structure and chemical composition of cytomembrane and cytoderm, we design high-tortuosity holey graphene as a highly efficient anode for PIBs. The flake cytomembrane and cytoderm shrink into wrinkled morphology during drying and sintering and then convert into high-tortuosity graphene after oxidative exfoliating and thermal reducing process. Mean-while, the proteins, sugars, and glycolipids embedded in cytomembrane and cytoderm can in-situ form nanoholes with highly abundant oxygenic groups and heteroatoms around, which can be easily removed and finally the high-tortuosity holey graphene is obtained after a thermal reducing process. The stress distribution after K + intercalation confirms the optimized release of strain caused by the volume change through the finite element method. Benefiting from the unique nanoholes shortening the ion-diffusion length, the synergy of wrinkled and holey structure stabilizing volume fluctuation, and the enhanced electronic conductivity and specific surface area, the high-tortuosity holey graphene demonstrates high reversible capacities of 410 mAh g -1 at 25 mA g -1 after 150 cycles and retains 91.5% at 2 A g -1 after 2500 cycles.(c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.