• 文献标题:   Fabrication of Stacked MoS2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer
  • 文献类型:   Article
  • 作  者:   OH HM, KIM H, KIM H, JEONG MS
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Sungkyunkwan Univ SKKU
  • 被引频次:   1
  • DOI:   10.1038/s41598-019-42446-w
  • 出版年:   2019

▎ 摘  要

We fabricated the stacked bilayer molybdenum disulfide (MoS2) by using reduced graphene oxide (rGO) as a spacer for increasing the optoelectronic properties of MoS2. The rGO can decrease the interlayer coupling between the stacked bilayer MoS2 and retain the direct band gap property of MoS2. We observed a twofold enhancement of the photoluminescence intensity of the stacked MoS2 bilayer. In the Raman scattering, we observed that the E-2g(1) and A(1g) modes of the stacked bilayer MoS2 with rGO were further shifted compared to monolayer MoS2, which is due to the van der Waals (vdW) interaction and the strain effect between the MoS2 and rGO layers. The findings of this study will expand the applicability of monolayer MoS2 for high-performance optoelectronic devices by enhancing the optical properties using a vdW spacer.