▎ 摘　　要

Reproducible hysteresis in electrical resistance, bi-stable resistive switching effect, and hysteresis in current-voltage between source and drain (I-V-sd) curves are observed in millimeter length scale graphene devices, grown by chemical vapor deposition (CVD), with back gate structure. Strong dependence on the sweeping rate of back gate voltage (V-bg) suggests relaxation of charging and discharging effect in CVD graphene devices. A bi-stable resistance switching is also observed at all V-bg's. Temporal profiles of resistance indicate the charge-trapping characteristics with different relaxation times depending on the charge polarity of adsorbates. In addition, we found I-V-sd curves are dissimilar at different Vbg's where majority of charge carrier is of different type. All observed effects are mainly related to the charging and discharging effect with different relaxation characteristics in CVD-grown graphene at different V-bg. (C) 2012 Elsevier B.V. All rights reserved.