▎ 摘　　要

Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary. In this work, an asymmetric-dual-grating-gate graphene-terahertz-field-effect-transistor with a graphite back-gate was fabricated and characterized under illumination of 0.3 THz radiation in the temperature range from 4.5 K up to the room temperature. The device was fabricated as a sub-THz detector using a heterostructure of h-BN/Graphene/h-BN/Graphite to make a transistor with a double asymmetric-grating-top-gate and a continuous graphite back-gate. By biasing the metallic top-gates and the graphite back-gate, abrupt n(+)n (or p(+)p) or np (or pn) junctions with different potential barriers are formed along the graphene layer leading to enhancement of the THz rectified signal by about an order of magnitude. The plasmonic rectification for graphene containing np junctions is interpreted as due to the plasmonic electron-hole ratchet mechanism, whereas, for graphene with n(+)n junctions, rectification is attributed to the differential plasmonic drag effect. This work shows a new way of responsivity enhancement and paves the way towards new record performances of graphene THz nano-photodetectors.