• 文献标题:   Ground State Energy of Current Carriers in Graphene
  • 文献类型:   Article
  • 作  者:   RATNIKOV PV, SILIN AP
  • 作者关键词:  
  • 出版物名称:   BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
  • ISSN:   1068-3356
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.3103/S1068335608010077
  • 出版年:   2008

▎ 摘  要

The ground state energy of current carriers in graphene considered as a zero-gap semiconductor was calculated in the two-band approximation. The condition of the electronic (hole) system stability in graphene was obtained. The possibility of the zero-gap semiconductor-semimetal transition was discussed.