▎ 摘　　要

Herein, we report on a facile, low-cost, and efficient method to tune the structure and properties of chemically reduced graphene oxide (rGO) by applying a transient voltage across the rGO for ultrasensitive gas sensors. A large number of defects, including pits, are formed in the rGO upon the voltage activation. More interestingly, the number of epoxide and ether functional groups in the rGO increased after the voltage activation. The voltage-activated rGO was highly sensitive to NO2 with a sensitivity 500% higher than that of the original rGO. The lower detection limit can reach an unprecedented ultralow concentration of SO ppb for NO2 sensing. Density functional theory (DFT) calculations revealed that the high sensitivity to NO2 is attributed to the efficient charge transfer from ether groups to NO2, which is the dominant sensing mechanism. This study points to a promising method to tune the properties of graphene-based materials through the creation of additional defects and functional groups for high-performance gas sensors.