▎ 摘　　要

We explore the effect of Mo doping over the large enhancement of electrochemical property of Mo-doped SnO2 quantum dots (3-5 nm) grown over rGO (reduced graphene oxide) sheets by a soft chemical process in ambient conditions. The composites were prepared over a range of Mo doping concentrations (0-10%) and 5% Mo doping had achieved the best energy storage characteristics. The capacity of the active material could reach similar to 851 mAh g(-1) (@ 78 mA g(-1)) in the beginning and that retained similar to 89% (similar to 758 mAh g(-1)) with superior cyclic stability (100 cycles) and rate capability (506 mAh g(-1) @ similar to 1.5 A g(-1)). The addition of the reductant of 0.06 mol during the synthesis procedure led to further improvement of the capacity to similar to 875 mAh g(-1) (similar to 92% retention) and the rate capability (similar to 587 mAh g(-1)). These impressive results are ascribed to the distribution of Mo-doped SnO2 QDs, doping of Mo6+ at Sn4+ lattice sites providing more electrons for easy electrical transport, reduction of GO (graphene oxide) to rGO. Mo doping led to the decline in the charge transfer resistance (R-ct) from 14.99 omega for un-doped SnO2/rGO to 14.09 omega (2.5%), 11.61 omega (5%), and 11.4 omega (10%) and promote the electrochemical property of the composite. A simple room-temperature synthesis process was used to produce Mo-doped SnO2/rGO nanocomposite and can be employed for the production of many other oxides and their composites for interesting applications.