• 文献标题:   Effect of Graphene Doping and Sintering Temperature on Microstructure and Superconducting Properties of MgB2 Bulks
  • 文献类型:   Article
  • 作  者:   YANG F, LIU HR, WANG QY, XIONG XM, YAN G, FENG JQ, LI SQ, LI CS, FENG Y
  • 作者关键词:   mgb2, doping, sintering, microstructure, critical current density
  • 出版物名称:   RARE METAL MATERIALS ENGINEERING
  • ISSN:   1002-185X
  • 通讯作者地址:   Northwest Inst Nonferrous Met Res
  • 被引频次:   0
  • DOI:  
  • 出版年:   2019

▎ 摘  要

The effect of graphene doping on the microstructure and superconducting properties of MgB2 bulks was examined in comparison with the case of un-doped MgB2. The correlation among annealing temperatures, microstructures and superconducting properties in graphene doped MgB2 bulks was investigated. The phase, microstructure and superconductivity of MgB2 were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and superconducting quantum interference device (SQUID), respectively. The results show that the graphene doping results in an obvious improvement of the critical current density. The highest critical current density reaches 1.8x10(5) A/cm(2) at 20 K and 1 T.