▎ 摘　　要

Three-dimensional (3D) graphene were synthesized by chemical vapor deposition (CVD) under atmospheric pressure, and then it was used as an electrode support for electrochemical deposition of CdTe quantum dots. We further systemically analyzed the electrical properties of the obtained graphene/CdTe composite through semiconductor device analyzer and four-probe measurements. It shows that the conductivity of this composite material exhibits strong dependant behavior with temperature, it can reach up to 15668 S cm(-1) at 345 K, which is the twice higher value compared with the conductivity of 7677 S cm(-1) at 80 K. Meanwhile, the composite displays a nonlinear relationship between the logarithm of the conductivity and the reciprocal of the temperature. The surface-trap states are most likely responsible for the thermally activated transport behavior of this composite. Our results give a guide for its practical photoelectric applications based on graphene/CdTe heterostructures.