▎ 摘　　要

In this paper we report an optimised pattern of surface textured graphene current spreading layer (CSL) for the enhancement of light extraction efficiency (LEE) in InGaN/GaN vertical light emitting diodes (V-LEDs). It is found that by texturing graphene surface LEE improves drastically. This improvement is attributed to better current spreading of graphene and increased random and multiple scattering of light through textured surfaces. Simulation results illustrate that V-LEDs with surface textured (hexagonal pattern) ITO as CSL shows threefold improvement in light extraction efficiency compared to V-LEDs with no surface texturing on ITO CSL Further, LEE of V-LEDs having patterned graphene CSL is compared with that for indium tin oxide (ITO) CSL. V-LEDs with optimised hexagonal patterning on graphene CSL shows 13.42% enhancement of LEE compared to that of LED with hexagonal patterning on ITO surface. (C) 2015 Elsevier Ltd. All rights reserved.