▎ 摘　　要

We present a detailed investigation of the nucleation sites, growth, and morphology of large-area graphene samples synthesized via chemical vapor deposition (CVD) on bulk palladium substrates. The CVD chamber was systematically controlled over a large range of growth temperatures and durations, and the nature of graphene growth under these conditions was thoroughly investigated using a combination of scanning electron microscopy and a statistical analysis of >500 Raman spectra. Graphene growth was found to initiate at similar to 825 degrees C, above which the growth rate increased rapidly. At T = 1000 degrees C, defect-free high-quality graphene was found to grow at an unprecedented rate of tens of micrometers per second, orders of magnitude faster than past reports on Cu- or Ni-based growth, thus leading to macroscopic coverage of the substrate within seconds of growth initiation. By arresting the growth at lower temperatures, we found that graphene nanoislands preferred to nucleate at very specific positions close to terrace edges and step inner edges. Evidence of both epitaxial and self-limiting growth was found. Along with monolayer graphene, both Bernal and turbostratic multilayer graphene could be obtained. A detailed evolution of the different types of graphene, as a function of both growth temperature and duration, has been presented. From these, optimal growth conditions for any chosen type of graphene sample can be inferred.