• 文献标题:   Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene
  • 文献类型:   Article
  • 作  者:   IGLESIAS JM, MARTIN MJ, PASCUAL E, RENGEL R
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Salamanca
  • 被引频次:   15
  • DOI:   10.1063/1.4940902
  • 出版年:   2016

▎ 摘  要

We study, by means of a Monte Carlo simulator, the hot phonon effect on the relaxation dynamics in photoexcited graphene and its quantitative impact as compared with considering an equilibrium phonon distribution. Our multi-particle approach indicates that neglecting the hot phonon effect significantly underestimates the relaxation times in photoexcited graphene. The hot phonon effect is more important for a higher energy of the excitation pulse and photocarrier densities between 1 and 3 x 10(12) cm(-2). Acoustic intervalley phonons play a non-negligible role, and emitted phonons with wavelengths limited up by a maximum (determined by the carrier concentration) induce a slower carrier cooling rate. Intrinsic phonon heating is damped in graphene on a substrate due to the additional cooling pathways, with the hot phonon effect showing a strong inverse dependence with the carrier density. (C) 2016 AIP Publishing LLC.