• 文献标题:   Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
  • 文献类型:   Article
  • 作  者:   PARK J, JO SB, YU YJ, KIM Y, YANG W, LEE WH, KIM HH, HONG BH, KIM P, CHO K, KIM KS
  • 作者关键词:   bilayer graphene, fieldeffect transistor, molecular doping, bandgap opening, selfassembled monolayer
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   137
  • DOI:   10.1002/adma.201103411
  • 出版年:   2012

▎ 摘  要

Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.